Modeling annular through-silicon Via pairs in 3-D integration

Author

Aobo Chen ; Feng Liang ; Gaofeng Wang ; Bing-Zhong Wang

Author_Institution

Sch. of Phys. Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

A compact wideband model is introduced for annular through-silicon vias in three-dimensional integrated circuits. Closed-form formulas for the per-unit-height resistances and inductances of annular TSVs are obtained with inclusion of the metal-oxide-semiconductor effect, the skin effect in metal conductors, and the eddy current loss in semiconductors. The results from these analytical formulas have comparable accuracy as those from the full-wave solver in a wide frequency range.

Keywords

MIS devices; eddy current losses; skin effect; three-dimensional integrated circuits; 3-D integration; annular through-silicon via pairs; closed-form formulas; compact wideband model; eddy current loss; metal conductors; metal-oxide-semiconductor effect; skin effect; three-dimensional integrated circuits; Admittance; Equivalent circuits; Integrated circuit modeling; Metals; Silicon; Wideband; Zirconium; 3-D integration; Annular through-silicon via (TSV); analytical formula; eddy current; skin effect; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166746

Filename

7166746