Title :
InP HBT transferred substrate amplifiers operating to 600 GHz
Author :
Radisic, Vesna ; Scott, Dennis W. ; Monier, Cedric ; Wang, Sujane ; Cavus, Abdullah ; Gutierrez-Aitken, Augusto ; Deal, William
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
We report on two InP transferred-substrate (TS) HBT based terahertz monolithic integrated circuit (TMIC) amplifiers. The amplifiers use 200 nm InP HBTs and benzocyclobutene (BCB) inverted microstrip interconnect. The transferred substrate process removes the InP substrate and transfers the amplifiers to high thermal conductivity SiC substrate. The first amplifier is a nine stage common-emitter design. It has ~9 dB of small signal gain at 521 GHz. The second design is five-stage common-base amplifier. It has demonstrated gain of ~19 dB at 576 GHz. These are first reported TS InP HBT amplifiers above 200 GHz.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit interconnections; microstrip lines; organic compounds; submillimetre wave amplifiers; thermal conductivity; InP; InP HBT transferred substrate amplifiers; SiC substrate; TMIC amplifiers; benzocyclobutene; five-stage common-base amplifier; frequency 521 GHz; frequency 576 GHz; frequency 600 GHz; inverted microstrip interconnect; nine stage common-emitter design; size 200 nm; terahertz monolithic integrated circuit amplifiers; thermal conductivity; Capacitors; Gain; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Substrates; Amplifier; HBT; monolithic microwave integrated circuit (MMIC); sub-millimeter wave; transferred substrate;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166750
