Title :
A high voltage mm-wave stacked HEMT power amplifier in 0.1 µm InGaAs technology
Author :
Gavell, Marcus ; Angelov, Iltcho ; Ferndahl, Mattias ; Zirath, Herbert
Author_Institution :
Gotmic AB, Göteborg, Sweden
Abstract :
A stacked HEMT PA has been designed and implemented in a commercial 0.1 μm InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15% at 61GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2mm2 which makes this the most power dense V-band amplifier reported from GaAs with 100mW/mm2.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit design; millimetre wave power amplifiers; InGaAs; efficiency 15 percent; frequency 61 GHz; high voltage mm-wave stacked HEMT power amplifier; parallel devices; power dense V-band amplifier; size 0.1 mum; Gallium arsenide; HEMTs; Impedance; Power amplifiers; Power generation; Power measurement; FET; GaAs; HEMT; MMIC; PA; Power Amplifier; Stacked; V-band; mm-wave;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166754
