Robust stacked GaN-based low-noise amplifier MMIC for receiver applications

Author

Andrei, Cristina ; Bengtsson, Olof ; Doerner, Ralf ; Chevtchenko, Serguei A. ; Rudolph, Matthias

Author_Institution

Dept. of RF & Microwave Tech., Brandenburg Univ. of Technol., Cottbus, Germany

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

A robust two-stage low-noise amplifier based on GaN technology is presented. The MMIC LNA is realized using stacked transistors in the first stage to obtain high ruggedness. The LNA survived a record value of 43 dBm of input power at 5 GHz measured in a coaxial test fixture without any visible degradation of the transistors. The results prove that the new stacked architecture allows the LNA to withstand twice the CW input power expected for the conventional topology.

Keywords

III-V semiconductors; MMIC amplifiers; gallium compounds; low noise amplifiers; receivers; transistors; wide band gap semiconductors; GaN; LNA; MMIC; coaxial test; frequency 5 GHz; low-noise amplifier; receiver; transistors; Aluminum gallium nitride; Gain; Gain measurement; Gallium nitride; Logic gates; Power measurement; Wide band gap semiconductors; low noise amplifier; monolithic microwave integrated circuit (MMIC) amplifiers; noise; ruggedness; stacked amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166766

Filename

7166766