DocumentCode
725986
Title
High power and high efficiency Ka band power amplifier
Author
Din, Salah ; Wojtowicz, Mike ; Siddiqui, Mansoor
Author_Institution
Northrop Grumman Corp., Redondo Beach, CA, USA
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
4
Abstract
A 36 W Ka-band MMIC power amplifier using 0.2 um gate GaN HEMT technology is presented. The power was measured across 27 to 30 GHz with a minimum 30% PAE. A peak power of 40 W at 27 GHz was demonstrated. The MMIC area is a compact 13.5 mm^2 and uses 10.67 mm device periphery in the output stage. This demonstration is a significant improvement in performance over current Ka-band MMIC amplifiers.
Keywords
HEMT circuits; III-V semiconductors; MMIC power amplifiers; gallium compounds; GaN; GaN HEMT technology; Ka-band MMIC power amplifier; frequency 27 GHz to 30 GHz; power 36 W; power 40 W; size 10.67 mm; Area measurement; Gallium arsenide; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Power amplifiers; Gallium Nitride; MMIC; PAE; Power Density; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166776
Filename
7166776
Link To Document