Title :
Experimental evaluation of direct liquid cooling on GaN HEMT based power amplifier MMIC
Author :
Chenggang Xie ; Wilcoxon, Ross
Author_Institution :
Adv. Technol. Center, Rockwell Collins, Inc., Cedar Rapids, IA, USA
Abstract :
We describe the use of direct liquid cooling to improve the performance of an X-band GaN HEMT based power amplifier Monolithic Microwave Integrated Circuit. With improved cooling, the operating drain bias was increased from 20V to 44V and the PA MMIC delivered 5.1W/mm power density while dissipating 8.9W/mm of thermal power under continuous wave operating condition.
Keywords :
III-V semiconductors; MMIC power amplifiers; cooling; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; direct liquid cooling; monolithic microwave integrated circuit; operating drain bias; power amplifier MMIC; voltage 20 V to 44 V; Gain measurement; Gallium nitride; HEMTs; MMICs; Power measurement; Radio frequency; Temperature measurement; Direct liquid cooling; GaN; MMIC; power amplifier;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166777
