A flexible GaN MMIC enabling digital power amplifiers for the future wireless infrastructure

This paper presents a GaN power-switch MMIC and demonstrates its potential and its versatility in realizing power amplifier (PA) modules for future LTE base station transmitters with an increased digital content. The MMIC provides a compact high-gain broadband voltage-mode PA. With a TTL-level input voltage swing of 0.4 V_pp it reaches a large-signal gain of up to 40 dB. The PA can be used as a building block for various class-S and related applications. As examples, a single-chip and an H-bridge PA module for the 800 MHz band are reported as well as a digital Doherty PA.