DocumentCode :
726074
Title :
A highly linear dual-band Doherty power amplifier for femto-cell base stations
Author :
Seunghoon Jee ; Yunsik Park ; Yunsung Cho ; Juyeon Lee ; Seokhyeon Kim ; Bumman Kim
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Gyeongbuk, South Korea
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
A power amplifier (PA) for a femto-cell base station should be highly efficient, linear and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved by designing an asymmetric Doherty PA (DPA). The linearity is improved by applying third-order inter-modulation (IM3) cancellation method. For dual-band operation, a tunable switched capacitor is applied. A small size is achieved by designing the DPA using GaN MMIC process. The implemented dual-band DPA delivers a DE of 45.5/41.6%, ACLR of -35.6/-34.5 dBc, and a gain of 15.7/13.2 dB with an average output power of 35.3/33.7 dBm, respectively, for a 7.2 dB PAPR 10 MHz bandwidth LTE signal at 2.3 and 2.65 GHz.
Keywords :
III-V semiconductors; Long Term Evolution; MMIC amplifiers; femtocellular radio; gallium compounds; integrated circuit design; power amplifiers; wide band gap semiconductors; Doherty PA; GaN; LTE; MMIC; PAPR; femto-cell base stations; frequency 10 MHz; frequency 2.3 GHz; frequency 2.65 GHz; linear dual-band Doherty power amplifier; peak-to-average power ratio; third-order inter-modulation; Gallium arsenide; MMICs; Peak to average power ratio; Switches; Doherty power amplifier (DPA); Gallium nitride (GaN); Monolithic microwave integrated circuit (MMIC); long term evolution (LTE);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166901
Filename :
7166901
Link To Document :
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