• DocumentCode
    726080
  • Title

    High cut-off frequency RF switches integrating a metal-insulator transition material

  • Author

    Mennai, A. ; Bessaudou, A. ; Cosset, F. ; Guines, C. ; Passerieux, D. ; Blondy, P. ; Crunteanu, A.

  • Author_Institution
    XLIM, Univ. Limoges, Albert, France
  • fYear
    2015
  • fDate
    17-22 May 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present the design and the RF performances of two-terminals in-plane RF switches based on dioxide vanadium (VO2)-phase transition material. The VO2 material undergoes a thermally-driven metal-insulator transition showing a resistivity variation up to five orders of magnitude as the material changes between its insulator and metallic states. We realized inline RF switches integrating VO2 patterns of different lengths (3 to 20 μm) and investigated their switching properties for both thermal and electrical actuation. For a thermally actuated 3-μm length VO2 pattern switch we measured an off-state capacitance of 7.7 Ff and an on-state resistance of ~2 Ω, with a cut-off frequency higher than 10 THz.
  • Keywords
    metal-insulator transition; vanadium compounds; electrical actuation; high cut-off frequency RF switches; inline RF switches; metal-insulator transition material; metallic states; resistivity variation; switching properties; thermal actuation; two-terminals in-plane RF switches; Atmosphere; Atmospheric measurements; Capacitance; Length measurement; Micromechanical devices; Radio frequency; Switches; RF switches; VO2; metal insulator transition; negative differential resistance; self oscillations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2015 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/MWSYM.2015.7166910
  • Filename
    7166910