DocumentCode
726080
Title
High cut-off frequency RF switches integrating a metal-insulator transition material
Author
Mennai, A. ; Bessaudou, A. ; Cosset, F. ; Guines, C. ; Passerieux, D. ; Blondy, P. ; Crunteanu, A.
Author_Institution
XLIM, Univ. Limoges, Albert, France
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
3
Abstract
We present the design and the RF performances of two-terminals in-plane RF switches based on dioxide vanadium (VO2)-phase transition material. The VO2 material undergoes a thermally-driven metal-insulator transition showing a resistivity variation up to five orders of magnitude as the material changes between its insulator and metallic states. We realized inline RF switches integrating VO2 patterns of different lengths (3 to 20 μm) and investigated their switching properties for both thermal and electrical actuation. For a thermally actuated 3-μm length VO2 pattern switch we measured an off-state capacitance of 7.7 Ff and an on-state resistance of ~2 Ω, with a cut-off frequency higher than 10 THz.
Keywords
metal-insulator transition; vanadium compounds; electrical actuation; high cut-off frequency RF switches; inline RF switches; metal-insulator transition material; metallic states; resistivity variation; switching properties; thermal actuation; two-terminals in-plane RF switches; Atmosphere; Atmospheric measurements; Capacitance; Length measurement; Micromechanical devices; Radio frequency; Switches; RF switches; VO2 ; metal insulator transition; negative differential resistance; self oscillations;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166910
Filename
7166910
Link To Document