An improved equivalent circuit model based on the CMOS on-chip multiple coupled inductors from DC to millimeter-wave region

Author

Zongzhi Gao ; Xin Cao ; Yunqiu Wu ; Kai Kang

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

In this paper, an improved equivalent circuit model of multiple coupled inductors is proposed, as well as the parameter extraction method. First, the characteristics of the on-chip inductors are analyzed. Then according to electromagnetic properties of multiple coupled inductors, the improved equivalent model, which considers more parasitic effects among inductors, as well as the parameter extraction method are presented. The measurement structures are fabricated by the 0.18μm and 90nm CMOS technologies. It will be shown that the simulated results of the model are in good agreement with the measured results from DC up to millimeter-wave range and the validation of the proposed model is verified.

Keywords

CMOS integrated circuits; coupled circuits; equivalent circuits; inductors; millimetre wave integrated circuits; CMOS on-chip multiple coupled inductor; DC region; complementary metal oxide semiconductor; electromagnetic property; equivalent circuit model; millimeter-wave region; parameter extraction method; parasitic effect; size 0.18 mum; size 90 nm; Analytical models; Couplings; Semiconductor device measurement; CMOS; equivalent circuit model; millimeter-wave range; multiple coupled inductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166917

Filename

7166917