DocumentCode
726111
Title
|Γ;L |-dependent polynomial behavioral model for RF power transistors
Author
Jialin Cai ; Mengsu Yang ; Anding Zhu ; Brazil, Thomas J.
Author_Institution
Univ. Coll. Dublin, Dublin, Ireland
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
3
Abstract
A new, load reflection magnitude (|ΓL|)-dependent, Reduced-complexity Polynomial (RP) behavioral model is introduced in this paper. The presented model provides good accuracy while only requiring a small number of parameters. The potential of this model to help design a nonlinear circuit is demonstrated through the design of a broadband power amplifier (PA) with drain efficiency between 65-79% from 1.5 GHz to 2.5 GHz.
Keywords
integrated circuit design; power transistors; radiofrequency power amplifiers; wideband amplifiers; RF power transistors; broadband power amplifier; frequency 1.5 GHz to 2.5 GHz; load reflection magnitude; nonlinear circuit; polynomial behavioral model; Aluminum nitride; III-V semiconductor materials; Indexes; Power measurement; Three-dimensional displays; Nonlinear behavioral modeling; RF power amplifiers; broadband PA;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166946
Filename
7166946
Link To Document