Title :
A 40–110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor
Author :
Wen-Chian Lai ; Huey-Ru Chuang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.
Keywords :
CMOS integrated circuits; millimetre wave integrated circuits; semiconductor switches; CMOS traveling-wave T/R switch; SPDT T/R switch; frequency 40 GHz to 110 GHz; insertion loss; parallel inductor; size 90 nm; traveling wave switch; CMOS integrated circuits; CMOS technology; Impedance matching; Propagation losses; Radio frequency; Switches; Topology; 40–110 GHz; 90-nm; CMOS; high-isolation T/R switch; millimeter-wave (MMW); traveling wave;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166963
