• DocumentCode
    726126
  • Title

    A 40–110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor

  • Author

    Wen-Chian Lai ; Huey-Ru Chuang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2015
  • fDate
    17-22 May 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.
  • Keywords
    CMOS integrated circuits; millimetre wave integrated circuits; semiconductor switches; CMOS traveling-wave T/R switch; SPDT T/R switch; frequency 40 GHz to 110 GHz; insertion loss; parallel inductor; size 90 nm; traveling wave switch; CMOS integrated circuits; CMOS technology; Impedance matching; Propagation losses; Radio frequency; Switches; Topology; 40–110 GHz; 90-nm; CMOS; high-isolation T/R switch; millimeter-wave (MMW); traveling wave;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2015 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/MWSYM.2015.7166963
  • Filename
    7166963
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=726126