Title :
A new class-C very low phase-noise Ku-band VCO in 0.25 µm SiGe:C BiCMOS technology
Author :
Hyvert, Jeremy ; Cordeau, David ; Paillot, Jean-Marie ; Philippe, Pascal ; Fahs, Bassem
Author_Institution :
XLIM, Univ. of Poitiers, Angouleme, France
Abstract :
This paper presents a very low phase noise, fully integrated and differential Ku-band Voltage Controlled Oscillator (VCO) implemented in the QUBiC4X 0.25 μm SiGe:C BiCMOS process of NXP semiconductors. The originality of this design consists in using a new class-C architecture type. Under 5 V supply voltage and a maximum power dissipation of 123 mW, the proposed VCO features a worst case phase noise of -97 dBc/Hz at 100 kHz frequency offset from a 14.45 GHz carrier. The VCO is tuned from 13.59 GHz to 14.89 GHz with a tuning voltage varying from 1 V to 4.5 V and occupies 0.83×1.05 mm2.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; carbon; integrated circuit design; integrated circuit noise; microwave oscillators; phase noise; tuning; voltage-controlled oscillators; BiCMOS technology; NXP semiconductors; QUBiC4X BiCMOS process; class-C very low phase-noise Ku-band VCO; differential Ku-band voltage controlled oscillator; frequency 13.59 GHz to 14.89 GHz; frequency offset; power 123 mW; power dissipation; size 0.25 mum; size 0.83 mm; size 1.05 mm; tuning voltage; voltage 1 V to 4.5 V; BiCMOS integrated circuits; CMOS integrated circuits; Noise; Oscillators; Tuning; BiCMOS; Class-C; Phase noise; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166964
