DocumentCode :
726138
Title :
Tunable high-isolation W-band bandstop filters
Author :
Hickle, Mark D. ; Sinanis, Michael D. ; Peroulis, Dimitrios
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
Widely tunable, high-isolation W-band bandstop filters realized with evanescent-mode resonators are presented. These filters exhibit large notch depths of up to 70 dB, with 3-dB bandwidths as narrow as 1.5% and out-of-band insertion loss of less than 3.25 dB. Two filters are presented, which have 75-103 GHz and 96-108 GHz tuning ranges. These filters are fabricated using all-silicon technology, and are tuned with low-power electrostatic actuators which have bias voltages of less than 90V. The demonstrated filters have the potential to enable robust W-band communication systems which can operate in the presence of large interfering signals.
Keywords :
band-stop filters; electrostatic actuators; losses; millimetre wave filters; millimetre wave resonators; silicon compounds; Si; bias voltages; evanescent-mode resonators; frequency 75 GHz to 103 GHz; frequency 96 GHz to 108 GHz; low-power electrostatic actuators; out-of-band insertion loss; robust W-band communication systems; tunable high-isolation W-band band-stop filters; Apertures; Cavity resonators; Microstrip; Millimeter wave measurements; Silicon; Substrates; Tuning; Cavity resonators; Filters; Microwave filters; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166981
Filename :
7166981
Link To Document :
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