DocumentCode
726150
Title
A 1–1.2 GHz RF MEMS VCO with accurate noise characterization
Author
Ko, C. ; Ku, B.H. ; Gaddi, R. ; Rebeiz, G.M.
Author_Institution
Univ. of California, San Diego, La Jolla, CA, USA
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
3
Abstract
This paper presents the first RF MEMS VCO at 1-1.2 GHz with no measured mechanical resonances in its close-in frequency response. The oscillator results in output power of 2.5-4.5 dBm at 1-1.2 GHz and a best phase noise of -152 dBc/Hz at 10 MHz offset. A low-level spurious is seen at 131 kHz and its harmonics of 262 kHz due to the internal charge pump. The application areas are in high performance 0.5-3 GHz oscillators requiring varactor Q of 100-200.
Keywords
charge pump circuits; harmonics; micromechanical devices; microwave oscillators; phase noise; varactors; voltage-controlled oscillators; RF MEMS VCO; close-in frequency response; frequency 0.5 GHz to 3 GHz; frequency 10 MHz; frequency 131 kHz; frequency 262 kHz; internal charge pump; mechanical resonances; noise characterization; phase noise; varactor; voltage-controlled oscillators; Indexes; Micromechanical devices; Radio frequency; Voltage-controlled oscillators; RF MEMS; VCO; charge pump; noise; voltage leakage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166993
Filename
7166993
Link To Document