A SOI CMOS reconfigurable output matching network for multimode multiband power amplifiers

Author

Tant, G. ; Giry, A. ; Ferris, P. ; Pares, G. ; Arnould, J.-D. ; Fournier, J.-M. ; Raynaud, C. ; Vincent, P.

Author_Institution

Univ. Grenoble Alpes, Grenoble, France

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

A reconfigurable output matching network (OMN) for multimode multiband power amplifier (MMPA) applications has been designed and implemented using SOI CMOS RF switches and switched capacitor. The proposed reconfigurable matching network covers up to ten E-UTRA frequency bands ranging from 700 MHz to 920 MHz and presents two different impedance levels. It has been designed with four distinct RF paths, one path being dedicated to GSM/EDGE (2G/2.5G) PA applications and three paths being dedicated to UMTS/LTE (3G/4G) PA applications. The realized prototype occupies a silicon area of 1.5 mm² in a 130 nm SOI CMOS process. A lower than 3 Ohm input impedance has been measured for different operating modes and frequency bands.

Keywords

CMOS integrated circuits; power amplifiers; silicon-on-insulator; switched capacitor networks; GSM/EDGE; RF switches; SOI CMOS reconfigurable output matching network; UMTS/LTE; frequency 700 MHz to 920 MHz; multimode multiband power amplifiers; size 130 nm; switched capacitor; 3G mobile communication; CMOS integrated circuits; Indexes; Micromechanical devices; Radio frequency; Switches; Switching circuits; LTE; MMPA; SOI; matching network; multiband; multimode; power amplifier (PA); reconfigurable;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167038

Filename

7167038