A new method for extracting Ri and Rgd of the intrinsic transistor model of GaN HEMT based on extrema points of intrinsic Y-parameters

Author

Reynoso-Hernandez, J.A. ; Estrada-Mendoza, Jaqueline ; Maya-Sanchez, M.C. ; Pulido-Gaytan, M.A. ; Loo-Yau, J.R. ; Zuniga-Juarez, J.E. ; del Valle-Padilla, Juan Luis

Author_Institution

Centro de Investig. Cienc. y Educ. Super. de Ensenada (CICESE), Ensenada, Mexico

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

The classical method for extracting the intrinsic elements of the small signal equivalent circuit of the FET is based on the knowledge of intrinsic Y_ij-parameters. It requires finding the frequency range where the value of each intrinsic element is frequency independent. Using the extrema (maximum or minimum) points of the intrinsic Y_ij-parameters, this work proposes a new and reliable method for determining the intrinsic elements R_i and R_gd of GaN HEMT.

Keywords

III-V semiconductors; equivalent circuits; field effect transistors; high electron mobility transistors; wide band gap semiconductors; FET equivalent circuit; GaN; HEMT; extrema point; field effect transistor; frequency independent; frequency range; high electron mobility transistor; intrinsic Y-parameter; intrinsic element extraction; intrinsic transistor model; Computational modeling; Gallium nitride; HEMTs; Radio frequency; GaN HEMT; intrinsic elements extraction; linear modeling; semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167071

Filename

7167071