A 600V FS-IGBT using locally isolated P-well structures for improved short circuit ruggedness

Trench gate field stop (FS) IGBT is widely used in various power applications owing to its low conduction and switching losses. However, the trench gate FS-IGBT induces the high saturation current due to its high cell density so that it deteriorates the short circuit ruggedness, which is essential for the power applications such as welding machines and motor controls. In this paper, a 600V trench gate FS-IGBT having improved short circuit capability is proposed. The proposed IGBT employs locally isolated P-well structure in the active region. Thereby the IGBT shows sufficient short circuit withstanding time with V_{CE, SAT} of 1.5V and E_OFF of 25|jJ/A by means of the carrier stored effect.