Modular power converter integration based on non-conventional power switch assembly and interconnects

This work presents the development of a highly integrated power switch, based on 70μm thin IGBTs and diodes rated at 600 V. The integration relies on advanced ceramic substrate technology, featuring double-etched patterned copper tracks for a fully bond-wire-less double-sided cooling packaging solution; viases are also used in the ceramic substrates for vertical current conduction, which enables the introduction of a ground-plane structure within the switch, with greatly reduced overall values of parasitic inductance. The paper also proposes an outline of system-level integration solutions for ensuring that low-inductance characteristics at switch level are not lost when interconnecting to input filter and load.