Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules

Author

Rui Wu ; Smirnova, Liudmila ; Huai Wang ; Iannuzzo, Francesco ; Blaabjerg, Frede

Author_Institution

Center of Reliable Power Electron. (CORPE), Aalborg Univ., Aalborg, Denmark

fYear

2015

fDate

1-5 June 2015

Firstpage

850

Lastpage

856

Abstract

With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

Keywords

insulated gate bipolar transistors; power semiconductor devices; semiconductor device reliability; IGBT power modules; current 1 kA; current imbalance; parallel chips; power rating; reliability level; stray parameters imbalance; voltage 1.7 kV; Finite element analysis; Inductance; Insulated gate bipolar transistors; Logic gates; Multichip modules; Resistance; Transient analysis; Current Imbalance; Finite Element Method; Insulated-Gate Bipolar Transistor (IGBT); Power Modules;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on

Conference_Location

Seoul

Type

conf

DOI

10.1109/ICPE.2015.7167881

Filename

7167881