Title :
Compact SEPIC converter using a GaN HEMT
Author :
Saif, Z. ; Ahmad, V. ; Town, G.E.
Author_Institution :
Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia
Abstract :
The increasing demand for miniaturization in electronic devices has driven the design of compact power supplies which operate at higher switching frequencies. Gallium-nitride semiconductor switching devices are very promising for increasing the power density and efficiency of switch-mode power converters due to their high switching speed and low on-resistance relative to silicon devices. In this paper we describe a simple SEPIC converter using a normally-off hybrid GaN-on-Si cascode switch. Operating with a switching frequency around 1.5MHz, and with 100W load, the compact circuit was measured to have a conversion efficiency of 94.25%.
Keywords :
DC-DC power convertors; gallium compounds; high electron mobility transistors; silicon; DC-DC converter; compact SEPIC converter; compact circuit; gallium-nitride-on-silicon HEMT; high electron mobility transistors; Capacitors; Gallium nitride; HEMTs; Inductors; MOSFET; Power electronics; Switches; DC-DC converter; GaN; high frequency SEPIC converter; high-electron-mobility transistors (HEMTs);
Conference_Titel :
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location :
Seoul
DOI :
10.1109/ICPE.2015.7168089