• DocumentCode
    726962
  • Title

    Impact of active areas on electrical characteristics of TiO2 based solid-state memristors

  • Author

    Qingjiang Li ; Hui Xu ; Khiat, Ali ; Zhaolin Sun ; Prodromakis, Themistoklis

  • Author_Institution
    Coll. of Electron. Sci. & Eng., Nat. Univ. of Defense Technol., Changsha, China
  • fYear
    2015
  • fDate
    24-27 May 2015
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    In this study, we explore the impact of active areas on electrical characteristics of practical TiO2 based memristors. Initially, it is experimentally demonstrated that high resistive state is independent of active areas, while low resistive state is in proportion to the dimensions of active cells. We then argue that these observations could stem from the filamentary formation and rupture within the TiO2 active cores. Finally, we investigate the dependence of I-V characteristics on active cell size and present measured results that are in good agreement with theoretical analysis.
  • Keywords
    cores; fracture; memristors; titanium compounds; I-V characteristics; TiO2; active areas; active cells; active cores; electrical characteristics; filamentary formation; resistive state; rupture; solid-state memristors; Electric variables; Electrodes; Hysteresis; Memristors; Optical switches; Programming; I-V loop; TiO2; active areas; solid-state memristor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
  • Conference_Location
    Lisbon
  • Type

    conf

  • DOI
    10.1109/ISCAS.2015.7168601
  • Filename
    7168601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=726962