Limitations and precision requirements for read-out of passive, linear, selectorless RRAM arrays

Author

Serb, Alexander ; Redman-White, William ; Papavassiliou, Christos ; Berdan, Radu ; Prodromakis, Themistoklis

Author_Institution

Electron. & Comput. Sci. Dept., Univ. of Southampton, Southampton, UK

fYear

2015

fDate

24-27 May 2015

Firstpage

189

Lastpage

192

Abstract

A practical system for reading out from linear, multi-level, selectorless Resistive Random Access Memory (RRAM) arrays based on a Trans-Impedance Amplifier (TIA) approach is presented and studied. SPICE simulation of the core of the system is performed in order to extract predicted sensitivity to error factors such as non-zero TIA offsets and access resistance. A physical implementation of the system is then tested on a small, 12 × 12 reference array and measured results show its ability to decode absolute resistive states in the range of 1 kΩ-220 kΩ within ≈ 11% tolerance.

Keywords

operational amplifiers; resistive RAM; SPICE simulation; absolute resistive states; error factors; linear RRAM arrays; multilevel RRAM arrays; passive RRAM arrays; predicted sensitivity; reference array; resistance 1 kohm to 220 kohm; resistive random access memory arrays; selectorless RRAM arrays; transimpedance amplifier; Accuracy; Current measurement; Electrical resistance measurement; Radio frequency; Random access memory; Resistance; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7168602

Filename

7168602