Title :
A 760μW 4th order butterworth FGMOS Gm-C filter with enhanced linearity
Author :
Algueta-Miguel, Jose M. ; De la Cruz Blas, Carlos A. ; Lopez-Martin, A.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Public Univ. of Navarra, Pamplona, Spain
Abstract :
A 4th order Butterworth Gm-C filter based on a low-power design technique employing Floating-Gate MOS (FGMOS) transistors is presented. It consists in a topological rearrangement of conventional fully-differential Gm-C structures decreasing the number of active blocks of the filter and relaxing the transconductor requirements at transistor level. Moreover, high linearity is obtained at low and medium frequencies of the pass band. Measurement results from a test chip prototype in a 0.5 μm standard CMOS n-well process are provided and compared with other published circuits, corroborating the advantages of the proposed topology. A static power consumption of 0.76 mW for a 3.3 V supply voltage has been obtained, with a BW tunable from 300 kHz to 850 kHz.
Keywords :
Butterworth filters; CMOS analogue integrated circuits; MOSFET circuits; integrated circuit design; low-pass filters; low-power electronics; 4th order Butterworth FGMOS Gm-C filter; active blocks; bandwidth 300 kHz to 850 kHz; conventional fully-differential Gm-C structures; gloating-gate MOS transistors; low-power design technique; power 760 muW; size 0.5 mum; standard CMOS n-well process; topological rearrangement; transconductor requirements; transistor level; voltage 3.3 V; FGMOS filter; Floating-Gate transistors; Gm-C filters; Low-Power; Low-Voltage; OTA-C filters;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7168624
