A 1.2-V 1.35-μW all MOS temperature sensor for wireless sensor networks

Author

Azcona, C. ; Calvo, B. ; Medrano, N. ; Celma, S. ; Gimeno, C.

Author_Institution

Group of Electron. Design - I3A, Univ. of Zaragoza, Zaragoza, Spain

fYear

2015

fDate

24-27 May 2015

Firstpage

365

Lastpage

368

Abstract

This paper presents a compact temperature sensor with frequency output, suitable to be used in low-cost wireless sensor networks. It works with a supply voltage of 1.2 V, and a power consumption of 1.35 μW. The sensor, designed in a 0.18-μm CMOS technology using only MOS transistors, shows high linearity over a temperature range of (-40 °C, +120 °C), with output frequencies that vary from 100 kHz. Recovered temperatures show a maximum error of -0.67/+0.66 °C over the whole range.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit design; temperature measurement; temperature sensors; wireless sensor networks; CMOS technology; MOS temperature sensor; MOS transistor; frequency 100 kHz; power 1.35 muW; size 0.18 mum; temperature -40 degC; temperature 120 degC; voltage 1.2 V; wireless sensor network; CMOS integrated circuits; Capacitors; Temperature distribution; Temperature measurement; Temperature sensors; Transistors; Wireless sensor networks; Temperature sensor; frequency output; low-voltage low-power; wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7168646

Filename

7168646