A 0.5–30GHz wideband differential CMOS T/R switch with independent bias and leakage cancellation techniques

A 0.5–30GHz wideband differential CMOS T/R switch is proposed with low insertion loss (IL), high power handling capacity and high TX-RX isolation. The independent bias technique is proposed to keep the transistors in ideal on/off mode to improve IL and power handling capacity. The leakage cancellation technique is introduced to cancel leakage from TX port to RX port with two match paths. The proposed T/R switch has been implemented in 65nm CMOS, and simulation results show that it achieves 1.2/1.9dB IL and 43/31dBm 1-dB compression point (P1dB) in TX/RX mode and 60dB TX-RX isolation over 0.5–30GHz.