DocumentCode :
727002
Title :
A novel pH-to-time ISFET pixel architecture with offset compensation
Author :
Moser, Nicolas ; Lande, Tor Sverre ; Georgiou, Pantelis
Author_Institution :
Dept. of Electr. & Electron. Eng, Imperial Coll. London, London, UK
fYear :
2015
fDate :
24-27 May 2015
Firstpage :
481
Lastpage :
484
Abstract :
A novel pixel architecture is presented to be part of a pH-based DNA microarray using ISFETs as chemical sensors. The design, based on APS architectures, performs pulse width modulation to encode the pH in time. It allows compensation for a major ISFET nonideality, offset in the threshold voltage, which is caused by trapped charge on the floating gate and the passivation layer of the ISFET. Also, the drop in sensitivity due to the passivation capacitance inherent to CMOS processes is attenuated. The system is implemented using a 0.35 fim standard CMOS technology. The pixel is shown to achieve a high and tunable accuracy of between 0.55 μs/dpH and 2.9 μs/dpH. Along with an estimation of the noise and the incidence of calibration, this leads to a resolution of approximately 20 mpH on a 1 pH-range. Trapped charge compensation proves to be effective up to an offset voltage of 1.25 V. The pixel is compact and reaches a total area of 16.5 μm × 16.25 μm.
Keywords :
CMOS integrated circuits; ion sensitive field effect transistors; lab-on-a-chip; passivation; DNA microarray; chemical sensors; floating gate; offset compensation; pH-to-time ISFET pixel architecture; passivation capacitance; passivation layer; pulse width modulation; standard CMOS technology; threshold voltage; trapped charge; Calibration; Capacitance; Chemicals; Discharges (electric); Logic gates; Noise; Sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
Type :
conf
DOI :
10.1109/ISCAS.2015.7168675
Filename :
7168675
Link To Document :
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