Title :
Configurable low noise readout front-end for gaseous detectors in 130nm CMOS technology
Author :
Hernandez, Hugo ; Van Noije, Wilhelmus ; Munhoz, Marcelo
Author_Institution :
Electr. Eng. Dept. of the Polytech. Sch., Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
A noise improved Charge Sensitive Amplifier (CSA) topology for a gaseous detector readout front-ends is presented. The proposed topology is based on the traditional cascode topology with addition of a PMOS to partially cancel the channel thermal noise and the flicker noise of the CSA input transistor. A noise improvement of about 23% was obtained without increasing power consumption. Additionally, the proposed circuit reduces the dependence of the noise on the detector capacitance. A chip with 5 front-ends channel implemented with the proposed CSA topology and a Semi-Gaussian shaper of 4th order was designed in TSMC 130nm CMOS technology. The fabricated front-end was designed for 160ns of peaking time, sensitivity of 30mV/fC and Equivalent Noise Charge (ENC) of 428e. The measured power consumption of the CSA and of the pulse shaper were 3.3mW and 4.2mW, respectively.
Keywords :
CMOS integrated circuits; flicker noise; gas sensors; pulse shaping circuits; readout electronics; CMOS technology; cascode topology; channel thermal noise cancellation; charge sensitive amplifier; configurable low noise readout front end; flicker noise cancellation; gas detectors; power 3.3 mW; power 4.2 mW; semiGaussian pulse shaper; size 130 nm; Capacitance; Detectors; Noise; Resistance; Thermal noise; Topology; Transistors;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7168819