DocumentCode :
727084
Title :
Stability analysis supports memristor circuit design
Author :
Ascoli, Alon ; Tetzlaff, Ronald ; Slesazeck, S. ; Mahne, H. ; Mikolajick, T.
Author_Institution :
Inst. fur Grundlagen der Elektrotechnik und Elektron., TUD, Dresden, Germany
fYear :
2015
fDate :
24-27 May 2015
Firstpage :
1138
Lastpage :
1141
Abstract :
In this paper1 a stability analysis sheds light into aspects of memristor circuit design, revealing a circuit theoretic technique for the stabilization of the NDR portion of the device DC characteristic. This type of studies supports the work of designers exploring memristor potential in electronics. Concepts from nonlinear dynamics theory allow us to gain a deep understanding of the dynamics of our locally-active memristor. The analysis provides hints on how to design an oscillator where limit-cycle behavior emerges from the locally-active threshold switching of the memristor, as theoretically proved here.
Keywords :
circuit stability; circuit theory; memristor circuits; oscillators; DC characteristic; NDR portion; circuit theoretic technique; limit-cycle behavior; locally-active threshold switching; memristor circuit design; negative differential resistance; nonlinear dynamics theory; oscillator; stability analysis; Integrated circuit modeling; Local activities; Mathematical model; Memristors; Oscillators; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
Type :
conf
DOI :
10.1109/ISCAS.2015.7168839
Filename :
7168839
Link To Document :
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