DocumentCode :
727086
Title :
Noise properties of ideal memristors
Author :
Georgiou, Panayiotis S. ; Koymen, Itir ; Drakakis, Emmanuel M.
Author_Institution :
Department of Bioengineering, Imperial College, South Kensington Campus, London, SW7 2AZ
fYear :
2015
fDate :
24-27 May 2015
Firstpage :
1146
Lastpage :
1149
Abstract :
This work investigates how the presence of thermal noise influences the response of simple networks incorporating an ideal memristor. First we study how a single noiseless memristor modulates noise at its input and how it manifests at its output. Then we extend our analysis to a generic resistor-memristor and capacitor-memristor network. The results reported are based on strong assumptions regarding the type of noise and the instantaneous linearity of the memristor networks, and should be viewed only as trend indicators.
Keywords :
Gaussian noise; Memristors; Noise measurement; Thermal noise; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon, Portugal
Type :
conf
DOI :
10.1109/ISCAS.2015.7168841
Filename :
7168841
Link To Document :
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