Electronic packaging of SiC MOSFET-based devices for reliable high temperature operation

Author

Liang Yin ; Cheng-Po Chen ; Kapusta, Christopher ; Ghandi, Reza

Author_Institution

Global Res. Center, Gen. Electr., Niskayuna, NY, USA

fYear

2015

fDate

24-27 May 2015

Firstpage

1170

Lastpage

1173

Abstract

Silicon carbide (SiC) devices allow electronics to operate at high junction temperatures (>200°C) and high voltages (>10 kV). In addition, they provide faster switching and lower power losses than their silicon-based counterparts. Recently, MOSFET (metal-oxide semiconductor field effect transistor) devices were demonstrated to work up to 500°C. Robust packaging solutions are needed to take advantage of the extreme temperature capability in the areas of propulsion, power generation, and oil/natural gas exploration. This paper reviews the current packaging challenges for 400-500°C operation temperature, and presents a hermetic package solution for reliable operation.

Keywords

MOSFET; semiconductor device packaging; silicon compounds; wide band gap semiconductors; SiC; SiC MOSFET; electronic packaging; extreme temperature capability; hermetic package; metal-oxide semiconductor field effect transistor; oil-natural gas exploration; power generation; propulsion; reliable high temperature operation; robust packaging solutions; temperature 400 degC to 500 degC; Bonding; Gold; Liquids; Packaging; Reliability; Silicon carbide; Hermeticity; MOSFET; Packaging; Reliability; SiC;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7168847

Filename

7168847