Electronic packaging of SiC MOSFET-based devices for reliable high temperature operation

Silicon carbide (SiC) devices allow electronics to operate at high junction temperatures (>200°C) and high voltages (>10 kV). In addition, they provide faster switching and lower power losses than their silicon-based counterparts. Recently, MOSFET (metal-oxide semiconductor field effect transistor) devices were demonstrated to work up to 500°C. Robust packaging solutions are needed to take advantage of the extreme temperature capability in the areas of propulsion, power generation, and oil/natural gas exploration. This paper reviews the current packaging challenges for 400-500°C operation temperature, and presents a hermetic package solution for reliable operation.