Title :
Ferromagnetic GaMnP Prepared by Ion Implantation and Pulsed Laser Annealing
Author :
Ye Yuan ; Wang, Yannan ; Khalid, Muhammad ; Kun Gao ; Prucnal, Slawomir ; Gordan, Ovidiu Dorin ; Salvan, Georgeta ; Zahn, Dietrich R. T. ; Skorupa, Wolfgang ; Helm, M. ; Shengqiang Zhou
Author_Institution :
Helmholtz-Zentrum Dresden-Rossendorf, Inst. of Ion Beam Phys. & Mater. Res., Dresden, Germany
Abstract :
We present the magnetic, transport, and structural properties of GaMnP with different Mn concentrations prepared by ion implantation and pulsed laser annealing. The Curie temperature increases with Mn concentration and the samples show in-plane magnetic anisotropy due to the in-plane compressive strain in the GaMnP layer. Anomalous Hall effect and negative magnetoresistance are observed, indicating the carrier mediated nature of the ferromagnetism in GaMnP. According to the micro-Raman spectroscopy data after pulsed laser annealing, the implanted layer has been fully recrystallized and the carrier concentration (hole) increases with Mn concentration.
Keywords :
Curie temperature; Hall effect; III-V semiconductors; Raman spectra; compressive strength; ferromagnetic materials; gallium compounds; hole density; ion implantation; laser beam annealing; magnetic anisotropy; magnetic thin films; magnetoresistance; manganese compounds; pulsed laser deposition; recrystallisation; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; Curie temperature; GaMnP; Mn concentrations; anomalous Hall effect; carrier hole concentration; carrier mediated nature; ferromagnetic material; implanted layer; in-plane compressive strain; in-plane magnetic anisotropy; ion implantation; magnetic properties; microRaman spectroscopy; negative magnetoresistance; pulsed laser annealing; recrystallization; structural properties; transport properties; Annealing; Ion implantation; Magnetic hysteresis; Manganese; Perpendicular magnetic anisotropy; Temperature measurement; Dilute magnetic semiconductors (DMSs); GaMnP; ion implantation; pulsed laser annealing;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2322332
