Ferromagnetic GaMnP Prepared by Ion Implantation and Pulsed Laser Annealing

Author

Ye Yuan ; Wang, Yannan ; Khalid, Muhammad ; Kun Gao ; Prucnal, Slawomir ; Gordan, Ovidiu Dorin ; Salvan, Georgeta ; Zahn, Dietrich R. T. ; Skorupa, Wolfgang ; Helm, M. ; Shengqiang Zhou

Author_Institution

Helmholtz-Zentrum Dresden-Rossendorf, Inst. of Ion Beam Phys. & Mater. Res., Dresden, Germany

Volume

50

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

1

Lastpage

4

Abstract

We present the magnetic, transport, and structural properties of GaMnP with different Mn concentrations prepared by ion implantation and pulsed laser annealing. The Curie temperature increases with Mn concentration and the samples show in-plane magnetic anisotropy due to the in-plane compressive strain in the GaMnP layer. Anomalous Hall effect and negative magnetoresistance are observed, indicating the carrier mediated nature of the ferromagnetism in GaMnP. According to the micro-Raman spectroscopy data after pulsed laser annealing, the implanted layer has been fully recrystallized and the carrier concentration (hole) increases with Mn concentration.

Keywords

Curie temperature; Hall effect; III-V semiconductors; Raman spectra; compressive strength; ferromagnetic materials; gallium compounds; hole density; ion implantation; laser beam annealing; magnetic anisotropy; magnetic thin films; magnetoresistance; manganese compounds; pulsed laser deposition; recrystallisation; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; Curie temperature; GaMnP; Mn concentrations; anomalous Hall effect; carrier hole concentration; carrier mediated nature; ferromagnetic material; implanted layer; in-plane compressive strain; in-plane magnetic anisotropy; ion implantation; magnetic properties; microRaman spectroscopy; negative magnetoresistance; pulsed laser annealing; recrystallization; structural properties; transport properties; Annealing; Ion implantation; Magnetic hysteresis; Manganese; Perpendicular magnetic anisotropy; Temperature measurement; Dilute magnetic semiconductors (DMSs); GaMnP; ion implantation; pulsed laser annealing;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2014.2322332

Filename

6971732