DocumentCode
727162
Title
A wide band CMOS radio frequency RMS power detector with 42-dB dynamic range
Author
Jiayi Wang ; Yongan Zheng ; Fan Yang ; Fan Tian ; Huailin Liao
Author_Institution
Key Lab. of Microelectron. Devices & Circuits (MOE), Peking Univ., Beijing, China
fYear
2015
fDate
24-27 May 2015
Firstpage
1678
Lastpage
1681
Abstract
A wide band radio frequency (RF) root-mean-square (RMS) power detector (PD) is presented in this paper. A CMOS rectifier with unbalanced source-coupled pairs and auxiliary capacitors is utilized to constitute the reverse received signal strength indicator (reverse-RSSI) architecture as proposed power detector with operating frequency from 300 MHz to 10 GHz. The auxiliary capacitors are introduced to improve linearity at high input power dramatically. The power detector can be connected to power amplifier without directional coupler due to the capacitor attenuation array. Simulation results show that the maximum detection power is as high as +30 dBm and dynamic range reaches more than 42 dB with ±1 dB error. The proposed power detector is implemented in a standard 180nm CMOS process with 0.113 mm2 core area. The supply voltage is 3.3 V, and its static power consumption is 0.55 mW.
Keywords
CMOS integrated circuits; RSSI; UHF power amplifiers; capacitors; field effect MMIC; mean square error methods; microwave power amplifiers; rectifiers; CMOS rectifier; auxiliary capacitors; capacitor attenuation array; frequency 300 MHz to 10 GHz; power 0.55 mW; power amplifier; reverse received signal strength indicator; reverse-RSSI; root mean square; size 180 nm; unbalanced source-coupled pairs; voltage 3.3 V; wideband CMOS radiofrequency RMS power detector; Arrays; Attenuation; CMOS integrated circuits; Capacitors; Detectors; Radio frequency; Rectifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location
Lisbon
Type
conf
DOI
10.1109/ISCAS.2015.7168974
Filename
7168974
Link To Document