Title :
A study for replacing CMOS gates by equivalent inverters
Author :
Galani, Ch. ; Tsormpatzoglou, A. ; Chaourani, P. ; Messaris, I. ; Nikolaidis, S.
Author_Institution :
Department of Physics, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece
Abstract :
Analysis of the operation of CMOS gates is a complicated procedure. These gates can be replaced by equivalent inverters and therefore the expressions for the inverters are used to determine the electrical characteristics of the gates. In this paper, the equivalent inverter approach for replacing CMOS gates is evaluated. The NAND gate is used for this evaluation. Parametric expressions are created to determine the transistors widths of the equivalent inverter. A systematic method is used for incorporating the parameter dependencies in the expressions. Results verify the accuracy of this approach.
Keywords :
Delays; Integrated circuit modeling; Inverters; Logic gates; MOSFET; Semiconductor device modeling; Equivalent inverter; Gate modeling; Simulation; Timing analysis;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon, Portugal
DOI :
10.1109/ISCAS.2015.7169014
