Simple and accurate single event charge collection macro modeling for circuit simulation

A simple macro-model to accurately simulate upset error on CMOS devices is presented. This macro-model can accurately simulate the typical behavior of single event effect (SEE) caused by ionizing radiation charge collection at N type and P type diffusions. The model is calibrated using 3-D mixed mode technology computer aided design (TCAD) device simulations and implemented as a SPICE circuit macro-model. The model uses a dependent current source with a Weibull distribution to model the current injection on circuit node. The model shows physical response and adjusting parameters allows high accuracy to the 3-D TCAD simulated response.