Title :
Analysis of radiation effect on the threshold voltage of flash memory device
Author :
Hossain, Nahid M. ; Koppu, Jitendra ; Chowdhury, Masud H.
Author_Institution :
Comput. Sci. & Electr. Eng., Univ. of Missouri - Kansas City, Kansas City, MO, USA
Abstract :
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed by a mathematical model.
Keywords :
flash memories; radiation effects; transistors; data errors; flash memory device; floating gate transistor; logically-undefined region; radiation effect; radiation exposure; threshold voltage shift; upset errors; Charge carrier processes; Flash memories; Logic gates; Nonvolatile memory; Radiation effects; Spontaneous emission; Threshold voltage;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7169292
