• DocumentCode
    72753
  • Title

    \\hbox {Ni/GeO}_{x}\\hbox {/TiO}_{y}\\hbox {/TaN} RRAM on Flexible Substrate With Excellent Resistance Distribution

  • Author

    Chou, K.I. ; Cheng, C.H. ; Zheng, Z.W. ; Liu, Minggang ; Chin, Alvin

  • Author_Institution
    Department of Electronics Engineering, National Chiao Tung University, Hsinchu , Taiwan
  • Volume
    34
  • Issue
    4
  • fYear
    2013
  • fDate
    Apr-13
  • Firstpage
    505
  • Lastpage
    507
  • Abstract
    Excellent device-to-device distribution was achieved in high-performance \\hbox {Ni/GeO}_{x}\\hbox {/TiO}_{y}\\hbox {/TaN} resistive random access memory on low-cost flexible plastics, with low 30- \\mu\\hbox {W} switching power (9 \\mu\\hbox {A} at 3 V; - \\hbox {1} \\mu\\hbox {A} at - 3 V), \\hbox {10}^{5} cycling endurance, and good retention at 85 ^{\\circ}\\hbox {C} . These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
  • Keywords
    $hbox{TiO}_{y}$; $hbox{GeO}_{x}$ ; Flexible electronics; resistive random access memory (RRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2243814
  • Filename
    6471736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=72753