$\hbox {Ni/GeO}_{x}\hbox {/TiO}_{y}\hbox {/TaN}$ RRAM on Flexible Substrate With Excellent Resistance Distribution

Excellent device-to-device distribution was achieved in high-performance $\hbox {Ni/GeO}_{x}\hbox {/TiO}_{y}\hbox {/TaN}$ resistive random access memory on low-cost flexible plastics, with low 30- $\mu\hbox {W}$ switching power (9 $\mu\hbox {A}$ at 3 V; $- \hbox {1} \mu\hbox {A}$ at $-$ 3 V), $\hbox {10}^{5}$ cycling endurance, and good retention at 85 $^{\circ}\hbox {C}$ . These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.