DocumentCode
72764
Title
Thermal Transient Effect and Improved Junction Temperature Measurement Method in High-Voltage Light-Emitting Diodes
Author
Huaiyu Ye ; Xianping Chen ; van Zeijl, H. ; Gielen, Alexander W. J. ; Guoqi Zhang
Author_Institution
Mater. Innovation Inst., Delft, Netherlands
Volume
34
Issue
9
fYear
2013
fDate
Sept. 2013
Firstpage
1172
Lastpage
1174
Abstract
The diode forward voltage method with pulsed currents was widely used for monitoring junction temperature (Tj) of light-emitting diodes (LEDs). However, a thermal transient effect (TTE) was observed by the pulsed currents and consequent errors were introduced. Thermoelectric physics was conducted to explain this phenomena and a group of experiments was used to reveal the TTE during Tj measurement for high-voltage (HV) LEDs. In addition, an improved pulse-free direct junction temperature measurement method was conducted for HV LEDs to reduce the errors and to achieve in situ Tj measurement with dc currents, simpler setups, and a less step sequence.
Keywords
light emitting diodes; temperature measurement; HV LED; TTE; diode forward voltage method; high-voltage LED; high-voltage light-emitting diode; junction temperature monitoring; pulse-free direct junction temperature measurement method; pulsed current; thermal transient effect; thermoelectric physics; Current measurement; Junctions; Light emitting diodes; Temperature measurement; Temperature sensors; Transient analysis; Voltage measurement; Junction temperature measurement; light-emitting diodes (LEDs); thermal transient effect (TTE); thermoelectric (TE) physics;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2274473
Filename
6575116
Link To Document