• DocumentCode
    72764
  • Title

    Thermal Transient Effect and Improved Junction Temperature Measurement Method in High-Voltage Light-Emitting Diodes

  • Author

    Huaiyu Ye ; Xianping Chen ; van Zeijl, H. ; Gielen, Alexander W. J. ; Guoqi Zhang

  • Author_Institution
    Mater. Innovation Inst., Delft, Netherlands
  • Volume
    34
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    1172
  • Lastpage
    1174
  • Abstract
    The diode forward voltage method with pulsed currents was widely used for monitoring junction temperature (Tj) of light-emitting diodes (LEDs). However, a thermal transient effect (TTE) was observed by the pulsed currents and consequent errors were introduced. Thermoelectric physics was conducted to explain this phenomena and a group of experiments was used to reveal the TTE during Tj measurement for high-voltage (HV) LEDs. In addition, an improved pulse-free direct junction temperature measurement method was conducted for HV LEDs to reduce the errors and to achieve in situ Tj measurement with dc currents, simpler setups, and a less step sequence.
  • Keywords
    light emitting diodes; temperature measurement; HV LED; TTE; diode forward voltage method; high-voltage LED; high-voltage light-emitting diode; junction temperature monitoring; pulse-free direct junction temperature measurement method; pulsed current; thermal transient effect; thermoelectric physics; Current measurement; Junctions; Light emitting diodes; Temperature measurement; Temperature sensors; Transient analysis; Voltage measurement; Junction temperature measurement; light-emitting diodes (LEDs); thermal transient effect (TTE); thermoelectric (TE) physics;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2274473
  • Filename
    6575116