DocumentCode :
72785
Title :
A Junctionless Gate-All-Around Silicon Nanowire FET of High Linearity and Its Potential Applications
Author :
Wang, Tao ; Lou, Liang ; Lee, Chi-Kwan
Author_Institution :
Department of Electrical and Computer Engineering, National University of Singapore, Singapore
Volume :
34
Issue :
4
fYear :
2013
fDate :
Apr-13
Firstpage :
478
Lastpage :
480
Abstract :
The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. The SiNW FET shows a perfectly linear 
– 
relation and a nearly zero output conductance. The mechanism of its linear behaviors due to degenerate doping level has been also demonstrated. For RF applications, the proposed SiNW FET exhibits a much lower distortion for a whole range of load resistance, making it superior to modern short-channel MOSFET.
Keywords :
Third-order intermodulation (IM3); linearity; silicon nanowire (SiNW) FET;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2244056
Filename :
6471739
Link To Document :
