• DocumentCode
    72785
  • Title

    A Junctionless Gate-All-Around Silicon Nanowire FET of High Linearity and Its Potential Applications

  • Author

    Wang, Tao ; Lou, Liang ; Lee, Chi-Kwan

  • Author_Institution
    Department of Electrical and Computer Engineering, National University of Singapore, Singapore
  • Volume
    34
  • Issue
    4
  • fYear
    2013
  • fDate
    Apr-13
  • Firstpage
    478
  • Lastpage
    480
  • Abstract
    The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. The SiNW FET shows a perfectly linear I_{D} – V_{G} relation and a nearly zero output conductance. The mechanism of its linear behaviors due to degenerate doping level has been also demonstrated. For RF applications, the proposed SiNW FET exhibits a much lower distortion for a whole range of load resistance, making it superior to modern short-channel MOSFET.
  • Keywords
    Third-order intermodulation (IM3); linearity; silicon nanowire (SiNW) FET;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2244056
  • Filename
    6471739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=72785