Can Interface Traps Suppress TFET Ambipolarity?

Author

Beneventi, Giovanni Betti ; Gnani, Elena ; Gnudi, A. ; Reggiani, S. ; Baccarani, G.

Author_Institution

DEI, Univ. of Bologna, Bologna, Italy

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1557

Lastpage

1559

Abstract

The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed. Surprisingly, in conventional TFETs, high concentrations of acceptor-like ITs can suppress device ambipolarity, thus reducing transistor´s OFF-state current.

Keywords

field effect transistors; interface states; nanowires; technology CAD (electronics); tunnel transistors; 2D continuum; IT density; ITRS specs; TCAD; TFET ambipolarity; advanced nanowire TFET; interface traps; off-state current reduction; semiconductor-oxide interface traps; tunnel field-effect transistors; turn-on characteristics; Aluminum oxide; Electron traps; Field effect transistors; Logic gates; Semiconductor process modeling; Tunneling; Ambipolarity; InAs; band-to-band tunneling (BTBT); interface traps; tunnel field-effect transistor (TFET);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2284290

Filename

6650044