DocumentCode :
72833
Title :
Contact Thickness Effects in Bottom-Contact Coplanar Organic Field-Effect Transistors
Author :
Xu, Yan ; Scheideler, William ; Liu, Cong ; Balestra, F. ; Ghibaudo, Gerard ; Tsukagoshi, Kazuhito
Author_Institution :
WPI-MANA, NIMS, Tsukuba, Japan
Volume :
34
Issue :
4
fYear :
2013
fDate :
Apr-13
Firstpage :
535
Lastpage :
537
Abstract :
Influences of contact thickness on bottom-contact and bottom-gate coplanar organic transistors are studied. In transistors with poor-quality pentacene films, thick contacts improve mobility and lower contact resistance. However, in transistors with high-quality pentacene films, thick contacts significantly degrade performance by disrupting molecular self-organization at the contact edge. These results highlight the importance of contact thickness to such organic transistors and reveal that semiconductor morphology should be considered in designing devices with minimal contact effects.
Keywords :
Contact resistance; contact thickness; mobility; organic field-effect transistors (OFETs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2244059
Filename :
6471743
Link To Document :
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