DocumentCode :
728700
Title :
Evaluation of oxygen vacancy in ZnO using Raman spectroscopy
Author :
Fukushima, Hiroaki ; Kozu, Tomomi ; Shima, Hiromi ; Funakubo, Hiroshi ; Uchida, Hiroshi ; Katoda, Takashi ; Nishida, Ken
Author_Institution :
Dept. of Commun. Eng., Nat. Defense Acad., Yokosuka, Japan
fYear :
2015
fDate :
24-27 May 2015
Firstpage :
28
Lastpage :
31
Abstract :
Oxygen vacancies in zinc oxide (ZnO) are intrinsic defects, which are easily generated during crystal growth or device processing. Investigations of defects, such as oxygen vacancies, are important to understand the properties of ZnO. In this study, we attempt to quantify oxygen vacancies in ZnO powders using Raman spectroscopy. ZnO powder is reduced in a hydrogen atmosphere at 300-600 °C for 30-90 min. The peak position of the E2(high) mode, which is related to the oxide ion vibration, shifts toward a lower frequency as the oxygen vacancies increase. Upon re-oxidation, the initial E2(high) peak position is restored. Because the E2(high) peak shift is scaled with the amount of oxygen vacancies, this relationship can be used to estimate the amount of oxygen vacancies.
Keywords :
II-VI semiconductors; Raman spectra; oxidation; powders; reduction (chemical); vacancies (crystal); vibrations; wide band gap semiconductors; zinc compounds; Raman spectroscopy; ZnO; crystal growth; device processing; hydrogen atmosphere; intrinsic defects; oxide ion vibration; oxygen vacancy evaluation; reoxidation; temperature 300 degC to 600 degC; time 30 min to 90 min; zinc oxide powders; Atmosphere; II-VI semiconductor materials; Phonons; Powders; Raman scattering; Zinc oxide; Oxygen vacancy; Raman spectroscopy; Re-oxidized treatment; Reduced treatment; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location :
Singapore
Type :
conf
DOI :
10.1109/ISAF.2015.7172660
Filename :
7172660
Link To Document :
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