Title :
PMN-PT crystal of less defects and more uniformity
Author_Institution :
Innovia Mater. (Shanghai) Co., Ltd., Shanghai, China
Abstract :
3 inch lead magnesium niobate - lead titanate (PMN-PT) crystal ingots are successfully prepared using Vertical Gradient Freeze (VGF) method. Compared with the traditional Bridgman method, VGF method is expected to give higher yield and lower defects due to sufficient agitation and less thermal shock. As a result, [001] grown and poled PMN-PT crystals typically have electromechanical coupling coefficient k33 higher than 0.91, suitable for medical ultrasound imaging applications. Rhombohedral-tetragonal phase transition temperature is measured around 90°C and Curie temperature is measured over 125°C as typical imaging-grade crystals. Adequate agitation during growth also enhances in-wafer property uniformity. Variation coefficients for in-wafer free relative permittivity and electromechanical coupling coefficient kt is measured at 2% and 1%, respectively.
Keywords :
crystal growth from melt; dielectric polarisation; electromechanical effects; ferroelectric Curie temperature; ferroelectric transitions; freezing; ingots; lead compounds; permittivity; thermal shock; Curie temperature; Pb(MgNb)O3-PbTiO3; [001] grown crystal; agitation; electromechanical coupling coefficient; imaging-grade crystals; in-wafer free relative permittivity; in-wafer property uniformity; lead magnesium niobate-lead titanate crystal ingots; medical ultrasound imaging applications; poled crystal; rhombohedral-tetragonal phase transition temperature; thermal shock; variation coefficients; vertical gradient freeze method; Couplings; Crystallization; Dielectric constant; Lead; Temperature; Temperature measurement; PMN-PT; crystal growth; relaxor ferroelectric crystal; ultrasound imaging; vertical gradient freeze;
Conference_Titel :
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location :
Singapore
DOI :
10.1109/ISAF.2015.7172667