DocumentCode :
728720
Title :
Structure and dielectric properties of Bi2O3 doped BaTiO3-(Na1/4Bi3/4)(Mg1/4Ti3/4)O3 lead-free ceramics
Author :
Xuechen Huang ; Hanxing Liu ; Hua Hao ; Chuyu Peng ; Lin Zhang ; Yun Sun ; Yuanhang Zhou ; Minghe Cao
Author_Institution :
State Key Lab. of Adv. Technol. for Mater. Synthesis & Process., Wuhan Univ. of Technol., Wuhan, China
fYear :
2015
fDate :
24-27 May 2015
Firstpage :
155
Lastpage :
158
Abstract :
Bi2O3 doped BaTiO3-(Na1/4Bi3/4)(Mg1/4Ti3/4)O3 (BT-NBMT) polycrystalline ceramics were prepared by solid state reaction method. The effects of Bi2O3 additive on the microstructure and dielectric properties of BT-NBMT ceramics were investigated. The Bi2O3 effectively lowered the sintering temperature and improved the bulk density of BT-NBMT ceramics. The low-temperature stability first improved and then deteriorated with increasing Bi2O3 concentration. The core-shell microstructure undertook responsibility for the good dielectric temperature stability. The dielectric ceramic samples with good permittivity and low dielectric loss were obtained at a moderated sintering temperature. The results also suggest that the developed BT-NBMT ceramics may serve as a promising candidate for multilayer ceramic capacitors.
Keywords :
barium compounds; bismuth compounds; ceramics; dielectric losses; permittivity; sintering; sodium compounds; (BaTiO3-(Na0.25Bi0.75)(Mg0.25Ti0.75)O3):Bi2O3; BT-NBMT ceramics; bulk density; core-shell microstructure; dielectric loss; dielectric temperature stability; lead free ceramics; low temperature stability; permittivity; polycrystalline ceramics; sintering temperature; solid state reaction method; Ceramics; Dielectric constant; Microstructure; Temperature distribution; Thermal stability; BT-NBMT; Bi2O3; Core-shell microstructure; temperature stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location :
Singapore
Type :
conf
DOI :
10.1109/ISAF.2015.7172693
Filename :
7172693
Link To Document :
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