The orientation controlled (Pb,La)(Zr,Ti)O3 capacitor for improved reliabilities

Author

Saito, Takeyasu ; Amano, Taiga ; Takada, Yoko ; Okamoto, Naoki ; Kondo, Kazuo ; Yoshimura, Takeshi ; Fujimura, Norifumi ; Higuchi, Koji ; Kitajima, Akira

Author_Institution

Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan

fYear

2015

fDate

24-27 May 2015

Firstpage

226

Lastpage

229

Abstract

We fabricated ferroelectric (Pb,La)(Zr,Ti)O₃ (PLZT) capacitors by pulsed laser deposition (PLD) and investigated the effects of substrate temperature during PLD, Pb contents of the target, annealing temperature and period to improve ferroelectric properties. The R.T. deposition with higher Pb contents in the target (1.27) and subsequent annealing at 750°C for 10 min exhibited the best ferroelectric properties in this work. With higher deposition temperature than R.T. and lower annealing temperature than 700°C, large hysteresis loops were not observed.

Keywords

annealing; dielectric hysteresis; ferroelectric capacitors; ferroelectric materials; lanthanum compounds; lead compounds; pulsed laser deposition; reliability; PLD; PLZT; annealing temperature; deposition temperature; ferroelectric properties; orientation controlled ferroelectric capacitor; pulsed laser deposition; reliability; substrate temperature; temperature 293 K to 298 K; Annealing; Capacitors; Electrodes; Films; Hysteresis; Substrates; X-ray scattering; (Pb,La)(Zr,Ti)O3 thin film; crystallographic orientation; ferroelectric capacitor; pulsed laser deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the

Conference_Location

Singapore

Type

conf

DOI

10.1109/ISAF.2015.7172712

Filename

7172712