Various approaches for high performance and stable oxide thin-film transistors

Author

Yeong-gyu Kim ; Jae Won Na ; Won-Gi Kim ; Hyun Jae Kim

Author_Institution

Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2015

fDate

1-4 July 2015

Firstpage

25

Lastpage

28

Abstract

We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.

Keywords

amorphous semiconductors; thin film transistors; ultraviolet radiation effects; defect densities; high performance oxide thin-film transistors; hydrogen peroxide activation; oxygen partial pressure; sequential pressure annealing; stable oxide thin-film transistors; ultraviolet irradiation; vertically graded oxygen vacancy active layer; Annealing; Electric variables; Films; Hydrogen; Iron; Oxidation; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173187

Filename

7173187