Title :
Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays
Author :
Hekmatshoar, Bahman
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The prospect of thin-film heterojunction field-effect transistors comprised of hydrogenated amorphous Si gate contacts on crystalline Si substrates for applications in large-area electronics and particularly flat-panel and flexible displays is discussed. Several advantages of these devices including low-voltage operation, high stability, immunity to floating body effects, low-temperature processing and design flexibility are explained and verified experimentally.
Keywords :
amorphous semiconductors; electrical contacts; elemental semiconductors; field effect transistors; flat panel displays; flexible displays; low-power electronics; silicon; thin film transistors; Si; active matrix flat panel displays; crystalline Si substrates; flexible displays; floating body effects; hydrogenated amorphous Si gate contacts; large-area electronics; low-temperature processing; low-voltage operation; silicon heterojunction thin film transistors; thin-film heterojunction field-effect transistors; Dielectrics; Gate leakage; Logic gates; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173190
