Nitride devices prepared on flexible substrates

In this presentation, we will demonstrate successful operation of nitride devices prepared on various low cost substrates by the use of a newly developed low temperature epitaxial growth technique named pulsed sputtering deposition (PSD). We have found that performances of GaN devices such as LEDs or HEMTs fabricated with PSD are as good as those fabricated with conventional MOCVD. We have also found that the use of PSD low temperature epitaxial growth technique allows us to utilize chemically vulnerable materials that have never been used as substrates for GaN based devices. These results indicate that the low growth temperature PSD epitaxial process is quite advantageous for fabrication of nitride devices on various flexible substrates.