Title :
Graphene/transition metal dichalcogenide/metal vertical heterostructure transistor with large current ON/OFF ratio
Author :
Moriya, Rai ; Sata, Yohta ; Yamaguchi, Takehiro ; Inoue, Yoshihisa ; Yabuki, Naoto ; Morikawa, Sei ; Masubuchi, Satoru ; Machida, Tomoki
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibit Schottky barrier. Owing to the low density of state of graphene, the position of graphene´s Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height at graphene/TMD interface. Based on this mechanism, a vertical transport in the heterostructure exhibits large current modulation of 105, and at the same time the heterostructure reveal operation current density of 104 A/cm2. These results reveal potential high performance of vFET for flexible electronics applications.
Keywords :
Schottky barriers; flexible electronics; graphene; high electron mobility transistors; molybdenum compounds; titanium; van der Waals forces; C-MoS2-Ti; Schottky barrier; exfoliated graphene; flexible electronics; graphene-transition metal dichalcogenide-metal heterostructure; van der Waals junction; vertical field effect transistor; vertical heterostructure transistor; Current measurement; Graphene; Junctions; Metals; Modulation; Schottky barriers; Voltage measurement;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173195
