Study on hydrogenation after BLDA in Si TFT with metal source/drain

Author

Shimoda, Kiyoharu ; Ashitomi, Takuya ; Okada, Tatsuya ; Noguchi, Takashi ; Nishikata, Osamu ; Ota, Atsushi

Author_Institution

Fac. of Eng., Univ. of the Ryukyus, Okinawa, Japan

fYear

2015

fDate

1-4 July 2015

Firstpage

97

Lastpage

98

Abstract

Poly-Si TFTs (Thin Film Transistors) by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT was fabricated with low temperature process below 490°C using BLDA (Blue Multi Laser Diode Annealing) without adopting ion-implantation. In place of impurity doped Si film, Ti of low work-function metal was adopted for source and drain. Hydrogen annealing steps were performed and the resultant TFT performance was compared for each step after channel formation, after deposition of insulating film or after completed TFT formation to optimize the hydrogen annealing process. Higher TFT performance is expected by performing the pre-hydrogen annealing after channel formation and subsequent forming annealing after completing Al electrode below 400°C.

Keywords

aluminium; elemental semiconductors; hydrogenation; laser beam annealing; silicon; thin film transistors; titanium; Al; Si; TFT; Ti; blue multilaser diode annealing; hydrogen annealing; hydrogenation process; low cost fabrication process; low work function metal; metal source-drain; polysilicon thin film transistors; Annealing; Fabrication; Films; Hydrogen; Performance evaluation; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173208

Filename

7173208